A CrO₂ and Out-of-Plane Silicene based Sub-10nm MTJ with perfect spin filtering efficiency and high tunnel magnetoresistance

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ABSTRACT

In this paper, properties of spin transport for MTJs (magnetic tunnel junction) consisting of CrO₂ Half Metallic Ferromagnetic (HMF) electrodes with out of plane silicene sheet as scattering region are analyzed. The transport phenomena in the proposed structure are purely tunneling due to the absence of transmission states near the Fermi level. This is contrary to the in plane structures where transmission states exist near the Fermi level. The proposed device shows the highest value (100%) of magneto-resistance. Spin-filtering efficiency reported in out-of-plane silicene-based MTJ is also increased because of silicene acting as a perfect barrier, results in feeble spin down current in both parallel and anti-parallel configurations. The proposed device has dimensions below 10-nm. Due to the use of silicene sheet as a scattering region, it is also likely to integrate well with the already existing silicon technology. It can be used for high-performance memory applications similar to MRAMs.

Significance of the study:

This study presents a sub-10nm magnetic tunnel junction (MTJ) using CrO₂ electrodes and out-of-plane silicene, achieving perfect spin filtering and 100% tunnel magnetoresistance, with potential for high-performance MRAM applications.

Summary of the study:

The study analyzes spin transport in sub-10nm MTJs with CrO₂ electrodes and out-of-plane silicene as the scattering region. The device shows 100% magnetoresistance and enhanced spin-filtering efficiency, making it suitable for high-performance memory applications like MRAMs.