Bijayalaxmi Sahoo, Abinash Pradhan, Shantinarayan Rout, Debadhyan Behera
1 Department of Physics, Ravenshaw University, Cuttack, Odisha-753003, India.
2 Department of Physics, Amity School of Applied Sciences, Amity University Mumbai, Maharashtra-410206, India.
*Author to whom correspondence should be addressed:
debadhyan_25@yahoo.co.in (Debadhyan Behera)
shantinarayan@gmail.com (Shantinarayan Rout)
ABSTRACT

Significance of the Study:
ZnO is a material that possesses unique physical, chemical and electronic properties. It is found promising for many applications such as photocatalyst, gas sensor, transparent conductor, antibacterial and biomedical agent etc. These applications are mainly based on the absorption of photons, generation of electron-hole pairs and subsequently, reaction with the target molecule. The presence of intrinsic or extrinsic defects in ZnO highly influences these processes. Like codoping ZnO is quite effective to tune its optoelectronic properties, it is essential to probe the bandgap edge absorption, and the defect levels present within the forbidden gap.
Summary of the Study:
This study is focused on the modification of microstructure and optical properties of ZnO thin films with Sn-In codoping. Change of crystallite orientation as well as nanoparticle morphology is observed with codoping. Particle size also reduces which may be seen as a result of interruption of particle growth. The decrease of transmittance is attributed to the increase of scattering of photons by defects created by doping. PL spectra indicate presence of various intrinsic defects in the film. Controlling the intrinsic defects in ZnO is quite essential to understand its applicability as a transparent conductor material in optoelectronic devices.